沉浸DUV石版画中光源动态稳定控制的分析
Yihua Zhu1,2, Dandan Han1, Chuang Wu1,2
1School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 101408, China.
Micromachines
|November 27, 2025
概括
深紫外线 (DUV) 光刻光学光源的动态不稳定性对集成电路制造产生重大影响. 控制脉冲能量波动对于在先进节点中保持关键维度均性和芯片产量至关重要.
科学领域:
- 半导体制造业 半导体制造业
- 光学石版印刷是一种光学石版印刷.
- 集成电路制造 集成电路制造
背景情况:
- 沉浸深紫外线 (DUV) 刻画对于10nm以下的特征图案在先进的集成电路中至关重要.
- DUV光源 (光谱,连贯性,能量) 的动态不稳定性降低了成像性能,影响了对比度,NILS和CD均性.
研究的目的:
- 量化建模激光参数波动对标准化图像日志斜率 (NILS) 和临界维度 (CD) 统一性的影响.
- 为了评估多参数激光不稳定性在浸泡DUV光刻画中的影响.
主要方法:
- 建立了系统的物理模型,用于对激光输出不稳定引起的成像干扰.
- 利用模拟来评估激光参数变化对线/空间 (L/S) 和端到线 (T2L) 结构的影响.
- 通过成像真实性评估验证了拟议的扰动模型.
主要成果:
- 频谱属性,连贯性变化和脉冲能量不稳定性共同降低了NILS并放大了CD变化.
- 脉冲能量波动对成像错误的影响要大于在先进节点的带宽和波长变化.
- 脉冲能量波动必须在45纳米线宽的1%以内,以满足10%的工艺窗口要求.
结论:
- 激光不稳定性在先进的DUV光刻中损害了图案忠实性和芯片产量.
- 为光源的动态稳定性控制提供理论基础.
- 提供了在下一代DUV光刻中优化工艺的实用见解.
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