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软错误弹性静态随机访问存储器,具有针对辐射环境的增强写入能力.

Se-Yeon Park1, Eun Gyo Jeong2, Sung-Hun Jo3

  • 1Department of Semiconductor Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.

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概括

本研究介绍了SHWA18T,它是用于太空系统的辐射硬化SRAM设计,为可靠的数据保留提供了对单事件颠覆 (SEUs) 和单事件多节点颠覆 (SEMNUs) 的更好的抵抗力.

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关键电荷是一个关键电荷.单一事件的颠覆 (SEU)单事件多节点调整 (SEMNU)写入访问时间的访问时间写入稳定性 写入稳定性

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科学领域:

  • 太空飞船的电子设备
  • 半导体设备物理学 半导体设备物理
  • 电子产品中的辐射效应.

背景情况:

  • 先进的半导体技术增加了SRAM对太空中辐射诱导的软误差的敏感性.
  • 传统的6T SRAM由于粒子撞击和电荷共享,容易受到单事件扰乱 (SEU) 和单事件多节点扰乱 (SEMNU) 的影响.

研究的目的:

  • 介绍一种新的辐射硬化SRAM设计,SHWA18T,专门用于太空应用.
  • 评估SHWA18T的性能和稳定性与现有的SRAM架构相比.

主要方法:

  • 在1V电源下使用90nm CMOS技术模拟了SHWA18T SRAM设计.
  • 分析了包括关键电荷和写入能力在内的性能指标.
  • 该设计与IASE16T,PRO14T,PRO16T,QCCS,SIRI和SEA14T架构进行了比较.

主要成果:

  • SHWA18T表现出卓越的性能,特别是在关键充电和写入能力方面.
  • 拟议的设计显示了对SEU和SEMNU的增强强性.
  • 与其他评估的设计相比,模拟分析证实了SHWA18T的可靠性提高.

结论:

  • SHWA18T SRAM设计提供了一个强大的解决方案,用于减轻太空系统中辐射诱导的软误差.
  • 这种增强的SRAM架构确保在恶劣的空间环境中稳定保留数据.
  • SHWA18T代表了用于太空应用的辐射硬化内存的重大进步.