相关实验视频

Updated: Jun 22, 2026

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

9.2K

通过无偏向的高加速应力测试 (uHAST) 改进金属间介电流过程,以提高HTRB在功率稳定性中获得高电子移动性晶体管 (HEMT) 的稳定性

Yu-Ting Chuang1,2, Niall Tumilty2, Tian-Li Wu3

  • 1MossFloat Ltd., Hsinchu City 30010, Taiwan.

Micromachines
|November 27, 2025
PubMed
概括

研究了化高电子移动性晶体管 (GaN HEMT) 在高温逆偏差下发生故障. 删除N-甲基-2-pyrrolidone (NMP) 处理解决了介电分层和提高了可靠性,防止故障.

关键词:
在HTRB中,HTRB是HTRB.介电分层处理 介电分层处理在p-GaN HEMTs中使用.在 uHAST uHAST.

更多相关视频

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

9.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.3K

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...