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Updated: Jan 10, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
07:38

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Published on: April 18, 2019

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用于SiC双极晶体管和TTL逆变器的SPICE模型由于玛辐射而导致的降解

Alex Metreveli1, Anders Hallén1, Carl-Mikael Zetterling1

  • 1Division of Electronics and Embedded Systems, School of Electrical Engineering and Computer Science (EECS), KTH Royal Institute of Technology, Teknikringen 31, 100 44 Stockholm, Sweden.

Micromachines
|November 27, 2025
PubMed
概括

这项研究开发了一种SPICE模型,用于碳化物 (SiC) BJT和在玛辐射下的逆变器. 该模型准确地预测了设备退化和电路故障,这对于恶劣环境的电子设备至关重要.

关键词:
BJTT 是一个很好的方法.这就是IC IC IC IC IC IC IC.香料 香料是一种香料.如果是SiC SiC玛辐射是一种玛辐射.变频器 变频器 变频器 变频器辐射辐射辐射辐射的辐射晶体管是一个晶体管.

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