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P-GaN HEMT 的 ESD 强度和保护技术

Yijun Shi¹, Yantao Chen¹, Liang He¹

¹The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.

|November 27, 2025

概括

这项研究表明,由于电荷积累,Schottky门P-GaN HEMT在ESD下失败. 双向ESD保护比单向方法提供更好的反向电压紧,尽管两种方法都可能存在泄漏问题.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

对于功率电子来说,P-GaN HEMT 是非常重要的.
了解静电放电 (ESD) 故障机制对于设备可靠性至关重要.
对于P-GaN HEMT而言,现有的ESD保护策略存在局限性.

研究的目的:

分析不同门结构的P-GaN HEMT中的ESD故障模式.
审查和比较单向ESD保护技术.
评估P-GaN HEMT的双向ESD保护技术.

主要方法:

在ESD压力下对Schottky和欧姆门P-GaN HEMT的故障分析.
对三个单向的ESD保护计划进行系统审查.
评估四个双向的ESD保护计划.

主要成果:

斯科特基门P-GaN HEMT由于电荷积累和过电压而出现故障故障.
单向ESD保护具有低的反向触发电压和泄漏电流.
双向ESD保护提供了卓越的反向电压紧,但也受到泄漏电流的影响.

结论:

门的结构显著影响P-GaN HEMT ESD的强度.
对逆ESD事件而言,双向ESD保护比单向ESD保护更有效.
需要进一步的研究来缓解GaN ESD保护电路中的泄漏电流.

关键词:

保护技术 ESD 保护技术这就是P-GaN HEMT.静电放电 (ESD) 是一种电静电放电.传输线脉冲 (TLP) 是一种传输线脉冲.触发电压的触发电压是什么

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