在InOx/AlOx异构结构中热温度组合的影响,用于高性能和稳定的解决方案处理的无连接晶体管
Jinhong Park1, Dohyeon Gil1, Se Jin Park1
1School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea.
Materials (Basel, Switzerland)
|November 27, 2025
概括
在无连接晶体管中的氧化和氧化层的高温回火显著提高了设备性能和偏差稳定性. 这个过程是可靠,高性能氧化物电子的关键.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 无连接薄膜晶体管 (JL TFT) 提供了低成本,大面积电子产品的潜力.
- 提高移动性和偏差稳定性对于JL TFT的进步至关重要.
研究的目的:
- 为了研究火温度对氧化物 (InOx) 和氧化物 (AlOx) 层在异构JL TFT中的影响.
- 通过可控回火优化InOx/AlOx JL TFT 的性能和可靠性.
主要方法:
- 使用溶液沉积和光模式制造InOx/AlOx异构JL TFTs的制造.
- 在250°C和400°C时,InOx和AlOx层的独立回火.
- 电气特性,以评估设备性能和偏差稳定性.
主要成果:
- 较高的回火温度 (400°C) 导致了InOx结晶和密集.
- 在AlOx中的降低金属基含量在400°C时化.
- 在400°C时炼的JL TFT显示出优异的电性能 (可移动性:1.57 cm2 V-1 s-1) 和出色的偏移稳定性 (Vth转移:1.70 V).
结论:
- 同时对通道和封闭层进行高温回火对于减少陷辅助散射至关重要.
- 优化的回火稳定了静电,从而提高了JL TFT中的偏差稳定性.
- 这项研究为开发高性能,偏差稳定的氧化物电子产品提供了实际指导方针.
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