用于高频/高温传感器接口电路的碳化物静电感应晶体管的评估:测量和建模
Jonathon R Grgat1, Maximilian C Scardelletti2, Christian A Zorman1
1Department of Electrical, Computer, and Systems Engineering, Case Western Reserve University, Cleveland, OH 44106, USA.
Sensors (Basel, Switzerland)
|November 27, 2025
概括
本研究描述了用于高温,高频传感器电路的碳化静电感应晶体管 (SiC SIT). 一个经过验证的小信号模型证明了与高达400°C的测量非常一致.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 碳化 (SiC) 设备在恶劣环境中提供了卓越的性能.
- 现有的SiC静电感应晶体管 (SIT) 的表征仅限于较低的温度.
- 传感器接口电路需要强大的组件,能够高频和高温运行.
研究的目的:
- 为传感器接口电路的SiC SIT进行表征,该电路可在100MHz和400°C工作.
- 为SiC SITs开发和验证一个高温小信号模型.
- 为先进的高温,高频电子电路开发奠定基础.
主要方法:
- 实验测量电流-电压特征和电容参数从25°C到400°C.
- 超导率 (gm) 的推断和小信号模型的开发.
- 模拟的散射参数与使用电路模拟工具测量数据的比较.
主要成果:
- 测量和模拟的散射参数之间有很强的一致性 (在400°C,20-100 MHz下<0.1dB的差异).
- 从测量结果来看,平均过渡频率 (ft) 为197.8MHz,与模拟的200MHz非常接近.
- 在超过100°C的温度下成功描述SiC SIT,这是出版文献中首次出现的.
结论:
- 开发的高温SiC SIT模型准确地预测了高达400°C的设备行为.
- SiC SIT 适用于在极端温度条件下运行的高频传感器接口电路.
- 这项工作使得在高温半导体电子领域的进一步创新成为可能.
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