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Updated: Jan 9, 2026

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在Si-MoSe2异构结构中,室温谷选择性发射由高质量因素的视腔使得可能

Feng Pan1, Xin Li2, Amalya C Johnson3

  • 1Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA. fpan22@stanford.edu.

Nature communications
|November 29, 2025
PubMed
概括

研究人员开发了一种性超表面,用于在二二化物 (MoSe2) 单层中进行室温谷选择性光辐射. 这一突破克服了山谷脱相的挑战,为先进的valleytronic设备和奇拉光源铺平了道路.

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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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