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Updated: May 2, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Published on: November 1, 2013

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水平定向的紧型合体量子井膜使高效和稳定的电光二极管成为可能.

Guohang Ba1, Yiyang Gong2, Mengqi Zhang1

  • 1Institute for Advanced Materials and Technology, University of Science and Technology, Beijing, China.

Nature communications
|December 1, 2025
PubMed
概括

研究人员开发了一种可扩展的方法,用于制造具有高度对齐的二极体的合体量子井膜. 这一突破提高了用于电光应用的光提取效率和设备性能.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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