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Updated: Jan 9, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

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通过超快铁电切换在二维材料中的可重编程载体寿命

Dongqi Yao1, Zhi-Guo Tao1, Changwei Zhang1

  • 1Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China.

Journal of the American Chemical Society
|December 2, 2025
PubMed
概括

No abstract available in PubMed .

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Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity11:30

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity

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High-Contrast and Fast Photorheological Switching of a Twist-Bend Nematic Liquid Crystal06:24

High-Contrast and Fast Photorheological Switching of a Twist-Bend Nematic Liquid Crystal

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相关概念视频

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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