堆叠不匹配边界对GaN光电子属性的不利影响

Jiaxing Wang1, Jingyang Zhang1, Qinchi Yue1

  • 1State Key Laboratory of Materials Low-Carbon Recycling, & College of Material Science and Engineering, Beijing University of Technology, Beijing, 100124, China.

Small methods
|December 3, 2025
PubMed
概括

化 (GaN) 纳米线中的缺陷显著影响光电探测器的性能. 双纳米线中的独特断开结构与堆叠故障会通过创建深度缺陷状态来降低性能.

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