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Updated: Jan 9, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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在2D MoS2和V-Doped MoS2中进行构成的非破坏性成像和量化,采用奥格散射图法

L'ubomír Vančo1, Ravi K Biroju1,2,3, Mário Kotlár1

  • 1Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology in Bratislava, Vazovova 5, Bratislava 812 43, Slovakia.

The journal of physical chemistry. C, Nanomaterials and interfaces
|December 4, 2025
PubMed
概括

奥格散射图提供了一种非破坏性的方法来表征二硫化 (MoS) 表面,揭示元素分布和V兴奋剂效应. 这种技术在2D材料中提高了Auger电子光谱 (AES) 精度高达30%.

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相关概念视频

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
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