雅努斯VAZ3H (A = Si,Ge;Z = N,P) 单层,表现出山谷极化,磁性异构和拓过渡等特征
Yang Yang1,2, Yanyang Cao1,2, Shao-Jie Zhang1,2
1School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, China. yyphysics@zzuli.edu.cn.
Physical chemistry chemical physics : PCCP
|December 5, 2025
概括
雅努斯VAZ3H单层显示可调节的电子和拓特性. 应变工程可以诱导相位过渡,从而导致在山谷电子学和拓设备中的潜在应用.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子化学 是一个量子化学.
背景情况:
- 简斯VAZ3H单层是一种2D材料的类别,具有潜在的新型电子特性.
- 了解它们的电子和拓特性对于高级应用至关重要.
研究的目的:
- 为了探索Janus VAZ3H单层 (A = Si,Ge;Z = N,P) 的电子和拓性质.
- 研究应变工程对其性能的影响,包括相变和拓相的出现.
主要方法:
- 用第一原理计算来研究电子和拓性质.
- 分析包括带结构,山谷极化,磁化轴和拓相识别.
主要成果:
- 在无应变状态下,VSiN3H,VSiP3H和VGeN3H表现出直接带隙铁路 (FV) 半导体特性,而VGeP3H表现出间接带隙.
- 应变工程诱导相位转换,包括带隙转移,过渡到半谷金属 (HVM) 状态,以及量子异常霍尔 (QAH) 阶段的出现.
- QAH阶段的特点是奇拉边缘状态,1e2/h的量子异常霍尔导电率 (AHC) 和1的切恩数.
结论:
- 通过应变工程,Janus VAZ3H单层具有可调节的电子和拓性质.
- 这些材料为开发下一代valleytronic和拓设备提供了一个有前途的平台.
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