,

Shunda Yang1, Lan Li1,2, Chensheng Lin1

  • 1State Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences; Fuzhou, Fujian 350002, China.

Science advances
|December 5, 2025
PubMed
概括

研究人员在Cu5TeS3I3 (CTSI) 中开发了一种"强制键离子化"策略,以实现超低的晶格导热率 (κlat). 这一突破为先进的热电材料提供了一个新的设计范式.