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在上的超导装置中观察接口压电

Haoxin Zhou^1,2,3, Eric Li^1,4, Kadircan Godeneli^1,2

¹Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.

Nature communications

|December 5, 2025

概括

接口压电,一个预测但未观察到的现象,在-连接处经验证实. 这一发现揭示了超导量子比特中的显著脱凝路途径,影响了它们的质量因素.

科学领域:

量子计算是一种量子计算.
材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学

背景情况:

超导量子处理器需要最小化超导量子比特中的脱凝.
压电合,介导光子和声子之间的能量交换,是已知的脱凝源.
虽然像这样的散装材料是非压电的,但接口不对称性被理论化为诱导压电损失.

研究的目的:

通过实验观察和描述超导装置中的接口压电.
确定接口压电作为影响量子比特性能的显著损失通道.
评估接口压电对量子比特质量因素的影响.

主要方法:

在基板上制造的数字间传感器.
从室温到毫克尔文的压电转导的测量.
电子机械合因子 (K2) 的量化.
对量子比特质量因素 (Q) 影响的理论建模.

主要成果:

在-连接处对接口压电的实验观测.
测量有效的机电合系数K2 ≈ (3 ± 0.4) × 10−5%,与弱压电基板相比.
建模表明,这种机制将量子位质量因子限制在104108.8的范围内.

结论:

接口压电被证实是超导装置中的一个重要的散射通道.
这一发现需要在超导量子比特的设计中考虑接口效应.
异构结构和音声工程对于推进下一代超导量子比特技术至关重要.

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