电子刺激驱动的β-Ga2O3元稳定性转变和自我组织机制:β→κ/γ/δ阶段
Xinqing Han1, Yalin Li2, Miguel L Crespillo3
1Shandong Provincial Key Laboratory of Nuclear Science, Nuclear Energy Technology and Comprehensive Utilization, School of Nuclear Science, Energy and Power Engineering, Shandong University, Jinan, 250061, P. R. China.
Advanced materials (Deerfield Beach, Fla.)
|December 8, 2025
概括
辐射诱导 (III) 氧化物 (Ga2O3) 的相变,使纳米级工程成为可能. 这些受控的变化对于开发先进的光电子设备至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 固态物理 固态物理
背景情况:
- 辐射驱动的自我组织为纳米级工程提供了新的途径.
- 氧化 (III) 氧化物 (Ga2O3) 在辐射下表现出复杂的相变.
- 调应变和电子结构是先进材料性能的关键.
研究的目的:
- 为了研究Ga2O3在辐射下的主导相变.
- 阐明驱动这些相变的微观结构机制.
- 了解辐射引起的缺陷与非线性光响应之间的联系.
主要方法:
- 不弹性热尖峰 (i-TS) 的计算.
- 分子动力学模拟.分子动力学模拟.
- 分析吉布斯自由能量变化 () 和压力效应.
主要成果:
- 确认了连续的相位过渡:β → κ → γ → δ在Ga2O3.3.
- 确定了特定的机制:间位积累 (β→δ),空位介导的截断 (β→κ) 和离子失调 (β→γ).
- 连接过渡到微观结构的变化,如半连贯接口,应变补偿和旋形成.
结论:
- 在Ga2O3中,辐射诱导的多相转换可以通过应力和缺陷来控制.
- 这些转变导致缺陷介导的非线性光响应.
- 这些发现对于Ga2O3.3的光电子工程应用至关重要.
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