一个完全与Si兼容的Ni/Si3N4/Al2O3/p+用于模拟突触的聚SiRRAM设备及其对处理内存应用程序的系统级评估
Yeji Lee1, Soomin Kim2, Seongmin Kim3
1Department of Semiconductor Engineering, Ewha Womans University, Seoul 03670, South Korea.
ACS omega
|December 8, 2025
概括
我们开发了一种与相容的电阻切换随机访问存储器 (RRAM) 设备,用于内存处理 (PIM) 应用程序. 该设备显示稳定的切换,高耐久性和出色的模拟突触行为,从而实现高效的AI硬件.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 处理内存 (PIM) 架构需要具有模拟功能的非挥发性内存设备.
- 现有的解决方案往往面临着兼容性,耐久性和能源效率方面的挑战.
研究的目的:
- 为PIM应用提出和描述一种全新的,完全Si兼容的电阻切换随机访问存储器 (RRAM) 设备.
- 评估该设备作为神经网络计算的模拟突触设备的潜力.
主要方法:
- 制造一个Ni/Si3N4/Al2O3/p+多Si RRAM设备,并集成CMOS工艺.
- 电气开关性能的表征,包括耐久性,保持性和模拟导电量调制.
- 使用NeuroSim实现和模拟VGG-8卷积神经网络 1.4.
主要成果:
- 该设备表现出稳定的双极切换,具有高开/关比 (~10^4) 和超过10^7个切换操作.
- 实现了优异的保留 (>10^5秒) 和用于突触应用的线性,对称的模拟导电量调制.
- 一个VGG-8神经网络模拟显示了高推断精度 (90.25%),低延迟和高能效.
结论:
- 拟议的Si兼容RRAM设备适用于节能PIM和模拟神经网络计算.
- 该设备的特性为下一代非易失性内存和AI硬件铺平了道路.
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