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种植条件对十二角形GaN微柱结构参数的影响,由XRD研究

J Serafińczuk^1,2,3, P Ciechnowska², S Gorantla²

¹Department of Nanometrology, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland.

|December 8, 2025

概括

化 (GaN) 微支柱具有不寻常的十二角形状,使用作为表面活性剂生长. 增长参数显著影响了微支柱尺寸和结构完整性.

科学领域:

材料科学材料科学材料科学
晶体学晶体学是指结晶学.
半导体物理半导体物理

背景情况:

化 (GaN) 微支柱对于电子和光电子设备至关重要.
标准的GaN增长通常会导致六角柱形状.
实现稳定的非六角形结构需要修改生长条件.

研究的目的:

研究具有稳定的a-和m-平面侧壁的十二角形GaN微柱的生长.
了解生长参数 (Ga,As,温度) 对微柱形态和结构的影响.
将结构性质与应变和格子特征相关联.

主要方法:

用于结构分析的X射线衍射 (XRD).
增长参数的变化 (,,温度).
用于3D结构可视化的表面和边缘测量.

主要成果:

成功生长了十二角形的GaN微柱,偏离了通常的六角形状.
证明了表面活性剂能够使稳定的a-和m-平面侧壁.
观察到微柱密度,高度,宽度和生长方向的显著变化,参数发生了变化.
XRD和应变分析揭示了GaN和GaNA中的形状,密度和格子应变之间的相关性.

结论:

表面活性剂是实现非六角形GaN微柱结构的关键.
控制生长参数对于定制微支柱特征至关重要.
格子菌株和马赛克结构与GaN微柱的观察到的形态和密度密切相关.

关键词:

在 GaN GaN 中.XRD XRD 在线观看边缘扫描扫描边缘扫描微型支柱是一种微型支柱.互惠格子地图的互惠格子地图

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