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结构和电气特性对PVD化纳米薄膜生长温度的依赖性

Virginijus Bukauskas1, Viktorija Strazdienė1, Tomas Daugalas1

  • 1Center for Physical Sciences and Technology, Sauletekio ave. 3, Vilnius LT-10257, Lithuania.

Nanotechnology
|December 9, 2025
PubMed
概括

基质温度显著影响 (Te) 薄膜结构和电性能. 优化温度控制纳米尺度形态和充电传输量身定制的薄膜设备.

关键词:
增长的温度增长的温度.当地的电气特性.泰勒烯是一种提烯.纳米结构是的纳米结构.热真空沉积的热真空沉积方式超薄的薄膜是一种超薄薄膜.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...