直接电荷转移转换驱动三重生成和二维混合矿中的光子上转换
Weijian Tao1, Guohua He1, Qingjie Feng2
1Department of Chemistry, State Key Laboratory of Extreme Photonics and Instrumentation, Zhejiang Key Laboratory of Excited State Energy Conversion and Storage, Zhejiang University, Hangzhou 310058, China.
Journal of the American Chemical Society
|December 9, 2025
概括
基于有机半导体的二维混合矿表现出独特的接口电荷转移. 这使得光子高效的上转换成为可能,为光电子应用开辟了新的途径.
科学领域:
- 材料科学
- 固态物理
- 摄影化学
背景情况:
- 有机半导体结合的二维混合矿通过有机-无机接口提供了新的特性.
- 这些材料的界面光学现象和激发状态过程在很大程度上尚未被探索.
研究的目的:
- 在有机半导体内嵌的二维混合矿中研究接口光学现象和激发状态过程.
- 在有机-无机界面发现新的光物理路径和功能.
主要方法:
- 时间分辨率光谱
- 一开始的计算
- 作为模型系统的 (BTm) 2PbI4的研究
主要成果:
- 具有II类能量水平对齐的下隙界面电荷传输 (CT) 过渡的明确识别.
- CT过渡振荡器强度与结构扭曲之间的相关性,突出了动态格子障碍的作用.
- 发现了一种新的激发状态通路,使得直接的分子三重生成和光子上升转换具有0.42 eV的能量增益.
结论:
- 在二维混合矿中确定有机-无机接口的新兴光学活动和光物理路径.
- 通过使用低间隙光子展示了三重感应和光子向上转换的新策略.
- 突出利用接口CT转换来实现先进的光电子功能.
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