相关实验视频

Updated: Jan 9, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

3.7K

在CeO2/La0.8Ba0.2MnO3的接口诱导的突触性能氧气储结口.

K N Rathod1, Gopal Datt2, Bagher Aslibeiki1,3

  • 1Division of Solid-State Physics, Department of Materials Science and Engineering, Uppsala University, Uppsala, SE 751 03, Sweden.

ACS applied materials & interfaces
|December 10, 2025
PubMed
概括

本研究介绍了一种使用二氧化 (CeO2) 和氧化 (La0.8Ba0.2MnO3) 的接口工程电阻开关装置. 这种新型设备提供了稳定,低功耗的操作,并展示了神经形态计算应用的有希望的突触行为.

关键词:
抑郁 抑郁症 抑郁症 抑郁症 是一种接口工程 接口工程 接口工程金 manganite 金 manganite 金 manganite 金 manganite 金 manganite 金 manganite 金纪念馆是为了纪念.这是一个神经形态神经形态的神经形态.氧气空缺的地方.潜能化的潜能化突触突触是指突触中的突触.

更多相关视频

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

10.7K
Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate08:23

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

Published on: September 28, 2019

7.8K

相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
866
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.1K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
517
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.7K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
746
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.4K