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Updated: Jan 9, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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通过层间脱,悬浮的几层MoS2的强烈直接带隙光发光

Jiahao Wu1, Jinyan Huang2, Juncong She1

  • 1State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China. shejc@mail.sysu.edu.cn.

Nanoscale
|December 10, 2025
PubMed
概括

研究人员开发了一种新方法来增强少数层二硫化物 (MoS2) 的光辐射. 该过程使用氧等离子体和激光处理来改进光电子设备并创建防伪功能.

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