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稳定的1T′′HfCl2单层具有强烈的激发作用和有前途的太阳能收获效率

João Marcos T Palheta1, André L de O Batista2, Efracio Mamani Flores3

  • 1Department of Physics, Federal University of Pelotas, PO Box 354, Pelotas, RS, 96010-900, Brazil. mauriciomjp@gmail.com.

Nanoscale
|December 10, 2025
PubMed
概括

计算选确定了1T′′-HfCl2作为一个稳定的二维半导体. 它表现出强烈的激发效应和宽带吸收,显示了光电子和太阳能应用的潜力.

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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