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Updated: Jul 1, 2026

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揭示MoS2单层的温度控制或辅助脱皮中的边界局部化界面相互作用

Chaoqi Dai1, Sikai Chen1, Boyuan Wen1

  • 1State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.

Nanomaterials (Basel, Switzerland)
|December 10, 2025
PubMed
概括

控制温度的二硫化物 (MoS2) 黄金脱皮显示,温和加热有助于通过释放污染物产生单层产量. 然而,弱的金 - 粘合导致金膜脱落,探测MoS2片边界相互作用.

关键词:
在AU辅助脱皮过程中,在MoS2中,MoS2就是MoS2.边界效应的边界效应温度控制的接口接口可以控制温度.过渡金属二甲基二甲基化物

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