揭示MoS2单层的温度控制或辅助脱皮中的边界局部化界面相互作用

Chaoqi Dai1, Sikai Chen1, Boyuan Wen1

  • 1State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.

PubMed
概括

控制温度的二硫化物 (MoS2) 黄金脱皮显示,温和加热有助于通过释放污染物产生单层产量. 然而,弱的金 - 粘合导致金膜脱落,探测MoS2片边界相互作用.