综合宽带和高效差频率生成频率的综合宽带和高效差频率生成频率

Haoran Li1, Jingyan Guo1, Fei Huang1

  • 1State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China.

Nature communications
|December 10, 2025
PubMed
概括

这项研究展示了一种高效的集成差异频率生成 (DFG) 设备,使用适应的薄膜尼酸盐波导. 该设备实现了48.6%的转换效率,推进了光通信和信号处理.

相关概念视频

Power Factor Correction01:20

Power Factor Correction

The power transmission to a factory involves the transfer of apparent power, a combination of active and reactive power. The power factor measures how effectively electrical power is converted into useful work output. The ratio of the real power (KW) that does the work to the apparent power (KVA) supplied to the circuit.
465
Generating Electromagnetic Radiations01:10

Generating Electromagnetic Radiations

The German physicist Heinrich Hertz (1857–1894) was the first to generate and detect certain types of electromagnetic waves in the laboratory. Starting in 1887, he performed a series of experiments that confirmed the existence of electromagnetic waves and verified that they travel at the speed of light. Hertz used an alternating-current RLC (resistor-inductor-capacitor) circuit that resonated at a known frequency and connected it to a loop of wire. High voltages induced across the gap in...
6.6K
Design Example01:23

Design Example

The innovation of touch-tone telephony revolutionized the telecommunications industry by replacing the traditional rotary dial with a dual-tone multi-frequency (DTMF) signaling system. This system uses a matrix-style keypad with buttons arranged in four rows and three columns, creating 12 distinct signals each assigned to a pair of frequencies. Each button press results in a simultaneous generation of two sinusoidal tones – one from a low-frequency group (697 to 941 Hz) and one from a...
516
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.2K