在MnBi2Te4单晶中抗铁磁纹理的动力学和形成
Min Gyu Kim1, Starr Boney1, Luke Burgard1
1Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, WI 53201, USA.
Materials (Basel, Switzerland)
|December 11, 2025
概括
一致的X射线成像可视化了MnBi2Te4.4中的反铁磁 (AFM) 域. 动态域壁重组显示出明显的歇斯底里,这表明了旋转电子设备的潜力.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 拓学材料 拓学材料
背景情况:
- 抗铁磁拓绝缘体 (AFM TI) 是一种具有独特电子性能的新型材料.
- MnBi2Te4是一种内在的AFM TI,使其成为探索量子现象的有前途平台.
- 了解磁域和磁域壁的行为对于利用它们的潜力至关重要.
研究的目的:
- 使用连贯的X射线成像在MnBi2Te4中直接可视化反铁磁 (AFM) 域和域壁.
- 为了研究AFM域壁的形态和动态.
- 探索AFM领域演化的温度依赖及其影响.
主要方法:
- 连贯的X射线成像被用来直接可视化AFM域和域壁.
- 测量了域壁宽度,并与之前的结果进行了比较.
- 分析了AFM顺序参数的温度依赖性.
主要成果:
- 直接成像可以将反相域壁作为明显的暗线来解决.
- 确定AFM域墙壁宽为550(30) nm.
- 在冷却和变暖时,在域和域壁进化中观察到明显的歇斯底里,动态重组发生在TN以下的狭窄温度间隔中.
- 飞行机机组顺序参数的温度依赖与中子散射数据相匹配.
结论:
- 一致的X射线成像为研究AFM领域动态提供了强大的工具.
- 在域壁进化中观察到的歇斯底里揭示了MnBi2Te4.4中复杂的能量格局.
- 可控制的AFM纹理和歇斯底里域墙壁表明在低功耗的自旋电子设备中的潜在应用.
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