在使用高频读出电子的薄4H-SiCPIN探测器中提取电子和孔漂移速度
Andreas Gsponer1,2, Sebastian Onder1,2, Stefan Gundacker1
1Marietta Blau Institute for Particle Physics, Austrian Academy of Sciences, Dominikanerbastei 16, 1010 Vienna, Austria.
Sensors (Basel, Switzerland)
|December 11, 2025
概括
研究人员为碳化 (SiC) 探测器开发了一个10GHz的读取板,可以直接测量电子和孔漂移速度. 这一进步对于高能物理和医学应用至关重要.
科学领域:
- 半导体物理 半导体物理
- 材料科学是一种材料科学.
- 粒子探测器技术的技术
背景情况:
- 碳化 (SiC) 为功率电子和耐辐射探测器提供了出色的性能.
- 目前的读数电子限制详细研究SiC探测器中的电荷载体漂移.
- 4H-SiC的高漂移速度对超快的粒子检测有希望.
研究的目的:
- 为了克服SiC探测器读出电子的局限性.
- 开发一个高频读取系统,用于精确的电荷载体漂移测量.
- 为了能够直接测量4H-SiC中的电子和孔漂移速度.
主要方法:
- 开发一个带宽为10GHz的高频读取板.
- 在UV激光,α粒子和质子束激发下记录来自4H-SiC二极管的短暂电流信号.
- 使用一个全面的模拟环境 (TCAD,Allpix^2,SPICE).
主要成果:
- 实现了电子和孔漂移信号的清晰分离.
- 电荷载体漂移速度被提取为电场的函数.
- 直接测量漂移速度显示与模拟的良好一致.
结论:
- 新的读取板成功地实现了SiC载荷载荷漂移速度的直接测量.
- 这些测量为验证和改进TCA模拟提供了关键数据.
- 这些发现推动了基于SiC的颗粒探测器的开发,用于要求高的应用.
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