在1T'α-CrXY (X,Y = S,Se,Te) 单层中进行压力选择磁性排序
Deju Zhang1,2, Yanning Zhang1,2
1Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China. yanningz@uestc.edu.cn.
Physical chemistry chemical physics : PCCP
|December 11, 2025
概括
在像1T'α-CrTeSe这样的二维磁性材料中的应变工程允许调整磁性质. 这项研究表明,应变可以将黑磁性转化为铁磁性,并有可能用于室温应用.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 二维 (2D) 磁性材料对于自旋电子设备至关重要.
- 了解它们的磁现象是技术进步的关键.
研究的目的:
- 为了研究1T'α-CrTeSe和CrSeS单层的应变调节磁性.
- 在拉伸应变下探索从黑磁性向铁磁性过渡的过程.
主要方法:
- 用第一原则计算来研究结构稳定性和磁性排序.
- 在平面内双轴拉伸应变下对异型交换相互作用的分析.
主要成果:
- 1T'α-CrTeSe由于异性交换相互作用而表现出一种性磁体状态.
- 在平面内双轴拉伸应变诱导了从黑磁性向铁磁性的过渡.
- 磁性过渡温度可以通过应变调整到接近室温的温度.
结论:
- 应变工程提供了一种强大的方法来控制2D材料中的磁性排序.
- 1T'α-CrTeSe和CrSeS是设计可调节的低维磁系统的有希望的平台.
- 这项研究为新型自旋电子设备应用开辟了道路.
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