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Updated: Jan 8, 2026

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
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Published on: December 27, 2012

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电磁干扰屏蔽有效性的极化操纵利用基于石墨烯薄膜的元材料

Zhe Wang1, Haoran Zu2,3, Zhi Luo1

  • 1Hubei Engineering Research Center of Radio Frequency Microwave Technology and Application, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, P. R. China.

Nature communications
|December 11, 2025
PubMed
概括

研究人员使用碳基复合材料开发了智能电磁干扰屏蔽材料. 这一突破使实时环境响应和先进电子应用的增强屏蔽性能成为可能.

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An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
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An applied magnetic field causes the electrons present in the molecule to circulate, setting up a local diamagnetic current within the molecule. The local diamagnetic current arising from circulating sigma-bonding electrons induces a magnetic field, Blocal that opposes the applied magnetic field, B0. The effective magnetic field experienced by these nuclei is given by the difference between the applied and local magnetic fields in a phenomenon called local diamagnetic shielding. Essentially,...
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In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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