分离的表面和批量拓安德森定位过渡在无序的轴向绝缘体中
Cormac Grindall1, Alexander C Tyner2,3, Ang-Kun Wu1,4
1Rutgers University, Department of Physics and Astronomy, Center for Materials Theory, Piscataway, New Jersey 08854, USA.
障碍可以解拓绝缘体.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 物质的拓相物质的拓相.
- 量子材料是一种量子材料.
背景情况:
- 物质的拓相具有明显的体积和边界电子间隙.
- 障碍可以导致分离的移动性差距,类似于兰道理论中的批量边界关键性.
研究的目的:
- 调查混乱对3D动力绝缘体的影响.
- 在无序状态下分析散装和表面移动性差距的明显演变.
主要方法:
- 使用一个三维的轴突绝缘体模型.
- 在高斯单元组合中引入了混乱.
- 分析了电子带结构和大厅导电.
主要成果:
- 在无序状态下展示了大量和表面拓学的不同间隙演变.
- 观察到每个表面出现2D未定量化异常的霍尔金属.
- 识别了类似于传统3D拓绝缘体表面状态的光谱和响应特性.
结论:
- 障碍可以在axion绝缘器中解散体和表面拓.
- 在表面上可以实现一种新的2D异常霍尔金属相.
- 结果提供了对拓相的洞察力,以及对其他量子材料的潜在扩展.
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