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无机氧化物基电阻随机访问记忆的最新进展:实际应用的挑战和策略

Anurag Pritam^1,2, Anwesha Mahapatra¹, Ritu Gupta¹

¹Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, India.

|December 13, 2025

概括

电阻随机访问存储器 (RRAM) 提供快速,可扩展,低功耗的非挥发性存储器解决方案. 这篇评论强调了基于氧化物的RRAM的进步,这对于下一代神经形态计算和脑启发的硬件至关重要.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
计算机科学计算机科学

背景情况:

电阻随机访问存储器 (RRAM) 是一个关键的新兴非易失性存储器技术.
RRAM提供了诸如高速,可扩展性,低功耗和CMOS兼容性等优势.
它的操作涉及对电介质材料的电阻调制,适合神经形态应用.

研究的目的:

审查基于氧化物的RRAM设备的最新进展.
将RRAM的发展与传统的内存技术进行比较.
讨论RRAM在神经形态计算中的作用.

主要方法:

基于氧化物的RRAM的文献综述.
切换机制的分析 (例如,丝状).
与现有的内存技术进行比较.

主要成果:

基于氧化物的RRAM已经从早期的memristor概念中显著演变.
各种无机和有机材料使可调节的切换和多层存储成为可能.
RRAM显示出低功耗,高密度和脑启发计算的前景.

结论:

基于氧化物的RRAM代表了先进内存解决方案的基础平台.
对于神经形态计算的未来来说,RRAM技术至关重要.
需要进一步的研究来应对当前的挑战,并释放充分的潜力.

关键词:

这是RRAM,RRAM.阵列级整合层面的整合.记忆器的使用者神经形态计算是一种神经形态计算.氧化物材料的氧化物材料.有两个终端设备的设备.

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