在超低电场下,在2D CuMnP2Se6中以相变驱动的铁反应
Jingyan Chen1, Meiling Xu2, Yuntao Jie1
1Jiangsu Key Laboratory of Extreme Multi-Field Materials Physics, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, China.
Nature communications
|December 13, 2025
概括
研究人员发现了新的2D多铁子,XMnP2(S/Se) 6,使磁场过渡的低电场控制成为可能. 这一突破为节能自旋电子和记忆器件铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 固态化学 固态化学
背景情况:
- 磁相转换的低电场电控对于高能效的自旋电子和非挥发性内存至关重要.
- 现有的二维多铁体中的弱磁电合限制了实际应用.
研究的目的:
- 识别具有强大的平面极化,用于增强磁电合的新型2D多铁材料.
- 研究这些新材料中磁性特性低电场电气控制的潜力.
主要方法:
- 使用计算方法进行晶体结构预测.
- 高通量第一原则计算来分析材料特性.
- 铁电和磁相过渡的研究.
主要成果:
- 鉴定了四种新的双金属酸多铁元素:XMnP2S/Se6 (X=Cu,Au).
- 在这些材料中发现了强大的平面内自发极化,减轻了脱极化效应.
- CuMnP2Se6表现出两个稳定的铁电相,具有可切换的极化和磁顺序,可通过电场控制,低至0.001V/年.
- 实现了低能量的屏障 (~49 meV/f.u.) 对于极化逆转和磁性过渡,磁电系数为0.04G⋅cm/V.
结论:
- 已识别的2D多铁器为电场驱动磁性提供了一个有前途的平台.
- 这些材料证明了在可行的条件下实现旋转电子和内存设备的实际应用的可行策略.
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