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Updated: Jan 8, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Published on: January 19, 2018

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在β-Ga2O3Schottky屏障二极管中直接探测陷动力学,使用单电压脉冲表征

Thanh Huong Vo1,2, Sunjae Kim1,3, Ji-Hyeon Park3

  • 1Department of Materials Science and Engineering, Korea Aerospace University, Goyang, 10540, Republic of Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|December 14, 2025
PubMed
概括

一种新的单脉冲方法有效地探测了氧化 (β-Ga2O3) 功率电子中的陷动态. 该技术量化了陷密度和捕获时间,这对于通过了解载体限制来提高设备性能至关重要.

关键词:
航空公司的捕获陷.单电压脉冲的特征表征.过渡电流分析 过渡电流分析陷状态 陷状态 陷状态β-Ga2O3 斯科特基屏障二极管

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