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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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基于InAs-Al 2D异构结构的强烈无流调节的超声波.

Shukai Liu1, Arunav Bordoloi2,3, Jacob Issokson4

  • 1Department of Physics, Joint Quantum Institute, and Quantum Materials Center, University of Maryland, College Park, MD, USA. sliu499@umd.edu.

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概括

具有透明超导半导体连接的流量挫折的盖特蒙量子位表现出显著增强的无和性. 这种内在特性简化了量子控制,并使量子信息处理的高保真性操作成为可能.

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科学领域:

  • 量子计算是一种量子计算.
  • 凝聚物质物理学 凝聚物质物理学
  • 超导电路中的超导电路

背景情况:

  • 盖特蒙量子比特通常表现出弱无和性,限制了它们的性能.
  • 门门中的流量挫折可以通过超电流和干扰来增强无声性.

研究的目的:

  • 在使用InAs-Al 2D异构结构的分离连接盖特蒙设备中研究增强的无声性.
  • 探索强无和性的潜力,以简化量子控制和提高量子比特性能.

主要方法:

  • 在InAs-Al 2D异构结构的基础上制造分离连接盖特蒙设备.
  • 流量依赖光谱分析器件转换并提取不协调性.
  • 连贯驱动量子比特来测量拉比频率.

主要成果:

  • 在半整数流的甜点点达到超过100%的和性.
  • 证明了连贯的量子比特驾驶与原始拉比频率超过100 MHz,没有脉冲成型.
  • 从高分辨率光谱学中提取了电流相位关系的细节.

结论:

  • 透明的超导半导体连接使盖特蒙量子位内在具有很大的无和性.
  • 强大的无和性简化了量子比特的控制,提高了性能,与传统的传输相比提供了优势.
  • 这些无声调节的gatemon量子比特是量子信息处理的宝贵资源.