在Sb接触的MoS2闪存内进行模拟内存搜索
Guoyun Gao1,2, Bo Wen1,2, Ni Yang3
1Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.
Nature nanotechnology
|December 15, 2025
概括
研究人员使用2D MoS2闪存设备开发了一种新型的内存,用于更快,更节能的人工智能. 这种内存计算显著减少了边缘设备中的数据传输瓶.
科学领域:
- 材料科学 材料科学 材料科学
- 计算机工程 计算机工程
- 人工智能的人工智能
背景情况:
- 传统硬件面临瓶,原因是内存和处理之间的数据传输速度很慢,阻碍了AI和边缘设备的性能.
- 现有的内容可定位记忆,虽然有希望,但受到晶体管性能的限制.
研究的目的:
- 引入一种新的模拟内容可定位存储解决方案.
- 为AI应用克服当前内存技术的局限性.
主要方法:
- 使用原子薄的二维 (2D) MoS2闪存与半金属接触.
- 实现了一个8x16模拟内容可定位存储阵列与256 MoS2闪存设备.
- 证明了对k-最近邻居分类的模拟汉明距离计算.
主要成果:
- 在2D MoS2闪存中实现了高的读出电流 (60μA μm-1) 和ON/OFF比率 (>10^9).
- 在内存搜索操作中实现了非常低的能耗 (每次搜索每单元低于0.1 fJ) 和延迟 (36 ps).
- 展示了机器学习任务的高精度,能源效率和低延迟.
结论:
- 开发的2D MoS2闪存为内存计算提供了一个变革性的解决方案.
- 这项技术有可能为智能边缘设备实现更高效,更可扩展的计算.
- 突出了二维材料在推进人工智能硬件能力方面的重要作用.
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