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MOS Capacitor01:25

MOS Capacitor

1.4K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.4K
Higher Mental Functions of Brain: Learning and Memory01:26

Higher Mental Functions of Brain: Learning and Memory

1.9K
Memory is one of the most vital higher mental functions of the brain. Memory is closely related to learning because it enables us to retain information and experiences from our past to use them in our present life. It also helps us to remember facts, events, and skills, such as riding a bike or swimming. There are two types of memory — declarative memory, which involves memorizing facts or events, and procedural memory, which enables us to remember how to do something like writing or...
1.9K
Understanding Memory01:19

Understanding Memory

1.3K
Memory is the retention of information or experiences over time, facilitated through three main processes: encoding, storage, and retrieval. Encoding is the process of inputting information into the memory system. For instance, when listening to a lecture, watching a play, reading a book, or having a conversation, the brain is actively encoding information. This initial stage involves transforming sensory input into a form that can be processed and stored by the brain. Various factors, such as...
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Non-ohmic Devices00:51

Non-ohmic Devices

1.4K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.4K
Biasing of FET01:22

Biasing of FET

653
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
653
System of Memory01:23

System of Memory

7.1K
Memory is categorized into three major systems: sensory memory, short-term memory (STM), and long-term memory (LTM). These systems differ in their capacity and the duration for which they can hold information. Sensory memory captures raw sensory input from the environment, holding it for just a few seconds or less. For example, on hearing a brief, loud sound, like a car horn honking, the sound seems to linger in the mind for a moment even after it stops. This is an instance of sensory memory...
7.1K

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相关实验视频

Updated: Jan 8, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

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基于V2O5的灵活memristors的接口工程,朝着高性能大脑启发的神经形态计算的方向发展.

Kumar Kaushlendra1, Davinder Kaur1

  • 1Functional Nanomaterials Research Laboratory (FNRL), Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Uttarakhand, India. davinder.kaur@ph.iitr.ac.in.

Nanoscale horizons
|December 17, 2025
PubMed
概括

这项研究介绍了基于V2O5的灵活电阻式内存设备,用于神经形态计算. 设备D2显示了优异的渐进电阻切换和突触行为,在神经网络模拟中实现了高精度.

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A Method for Growing Bio-memristors from Slime Mold
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A Method for Growing Bio-memristors from Slime Mold

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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相关实验视频

Last Updated: Jan 8, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.3K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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科学领域:

  • 材料科学 材料科学 材料科学
  • 电子工程 电子工程
  • 计算机科学 计算机科学

背景情况:

  • 神经形态计算旨在在电子系统中模仿大脑功能.
  • 灵活的电子产品为先进的计算架构提供了新的可能性.
  • 电阻切换内存设备是神经形态应用的关键组件.

研究的目的:

  • 开发和描述基于V2O5.5的灵活电阻式内存设备.
  • 为了研究接口层对突触应用的设备性能的影响.
  • 评估这些设备在人工神经网络中的潜力.

主要方法:

  • 使用直流磁喷射制造两种灵活的电阻记忆装置 (D1和D2).
  • 电阻切换行为的特征,包括SET/RESET过渡和多层次状态.
  • XPS深度分析分析界面层并了解切换机制.
  • 测试突触可塑性 (LTP/LTD) 和神经动力学模拟.
  • 使用设备特征对人工神经网络的模拟.

主要成果:

  • 设备D2展示了完全渐进的电阻切换 (GRS),由于NbOx/NiO接口层,增强了突触忠实度.
  • 这两种设备都表现出多层次的电阻状态,并复制了生物突触功能.
  • 与D1.1相比,D2设备显示了更高的内存窗口 (~552) 和耐久性 (>7000周期).
  • 使用D2模拟的神经网络实现了~86.75%的准确性,归因于线性模拟重量调制.

结论:

  • 基于V2O5的灵活电阻式内存设备显示出对高性能神经形态计算的重大前景.
  • 在D2中接口层的协同效应增强了模拟突触行为和设备可靠性.
  • 设备D2的特性非常适合用于先进的人工神经网络应用.