基于V2O5的灵活memristors的接口工程,朝着高性能大脑启发的神经形态计算的方向发展

Kumar Kaushlendra1, Davinder Kaur1

  • 1Functional Nanomaterials Research Laboratory (FNRL), Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Uttarakhand, India. davinder.kaur@ph.iitr.ac.in.

Nanoscale horizons
|December 17, 2025
PubMed
概括

这项研究介绍了基于V2O5的灵活电阻式内存设备,用于神经形态计算. 设备D2显示了优异的渐进电阻切换和突触行为,在神经网络模拟中实现了高精度.

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