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Updated: Jan 8, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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高功率密度化无线电频率晶体管通过增强核化在 heteroepitaxy 中

Hong Zhou1, Chaoqun Zhang1, Kun Zhang1

  • 1State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China.

Nature communications
|December 18, 2025
PubMed
概括

我们开发了一种离子植入技术,以改进高电子移动性化 (GaN) 晶体管 (HEMT). 这种方法显著降低了热阻,并提高了先进的无线电频率应用的功率密度.

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