替代过渡金属在CrSi2N4单层中使用的结构性,电子性和磁性特性
Mohamed A Abdelati1, Mohamed M Fadlallah2
1National Institute of Laser Enhanced Sciences, Cairo University, ElGiza, Egypt. maa@niles.edu.eg.
这项研究探讨了过渡金属化化 (CrSiN) 单层. 将CrSiN与各种过渡金属相合,可以产生用于自旋电子的磁性,半导体和半金属材料.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算化学计算化学
背景情况:
- 二维 (2D) 材料是一个快速增长的领域.
- (或) 化 (Mo(W) Si2N4) 预示着一个新的二维材料家族.
- 化 (CrSiN) 是一种半导体,带间隙为0.49 eV.
研究的目的:
- 研究CrSiN的结构性,磁性和电子性质.
- 探索用3d/4d过渡金属 (TM) 代替Cr的效应.
- 确定旋转电子和电子设备中的潜在应用.
主要方法:
- 使用密度函数理论 (DFT) 的计算.
- 分析了结构性,磁性和电子性质.
- 形成/结合能被计算出来并与原子性质相关联.
主要成果:
- 键的长度和形成能量取决于剂的原子大小和电子阴性.
- 与Ti/Zr,V/Nb,Mo和Mn/Tc合的CrSiN是非磁性的.
- /和的合会产生半导体单层,带有可调节带间隙 (0.20-0.52 eV).
- 在Sc/Y,Fe,Co/Rh,Ni/Pd和Zn/Cd的注中产生半金属单层.
- 用Cu和Ag合的CrSiN表现出金属的行为.
结论:
- 过渡金属兴奋剂显著改变了CrSiN单层的特性.
- 半金属的CrSiN结构对自旋电子应用具有前景.
- 金属CrSiN板可以用于旋转过器件.
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