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Updated: Jun 30, 2026

Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light
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在基于InAs的光探测器中,用于减少暗电流的AlInAs级别缓冲器

Bartłomiej Seredyński, Łukasz Kubiszyn, Krystian Michalczewski

    Optics express
    |December 19, 2025
    PubMed
    概括

    采用分级的印化 (AlInAs) 缓冲层,可显著减少印化 (InAs) 光探测器中的暗电流,这些光探测器生长在化 (GaAs) 基板上,尤其是在高温下.

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    相关概念视频

    MOSFET: Depletion Mode01:20

    MOSFET: Depletion Mode

    Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
    The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...