低损耗,大带宽的多端边缘合器,用于异质芯片集成,具有大模式-场-直径
Optics express
|December 19, 2025
概括
这项研究引入了一种新的四段多尖端合器 (FS-MTEC),用于高效地集成大模式场直径 (MFD) 激光芯片与光子. FS-MTEC 实现了低合损失和宽带宽,增强了异质芯片集成.
科学领域:
- 光子学和光学工程的工程.
- 材料科学与工程 材料科学与工程
- 半导体设备物理 半导体设备物理
背景情况:
- 整合宽波导,大模式场直径 (MFD) 激光增益芯片与光子芯片面临着由于高合损失的挑战.
- 现有的边缘合器通常是针对单模或小型MFD设备进行优化,限制了它们对大型MFD激光器的应用.
研究的目的:
- 提出和演示一种新的四段多尖端合器 (FS-MTEC),用于高效的异质整合宽波导,大MFD激光芯片与基于的光子芯片.
- 为了实现大型MFD激光芯片的高合效率和低损耗,克服当前的集成限制.
主要方法:
- 在FS-MTEC设计中使用Si3N4-on-insulator (SINOI) 平台.
- 在合端采用多端阵列结构,以量身定制模式的场分布.
- 设计了一个三段的逐渐缩小的波导过渡部分,以抑制模态扰动和衍射.
- 进行了三维有限差异时间域 (3D-FDTD) 模拟以进行优化和性能分析.
- 执行制造公差和蒙特卡洛分析,以评估设备的强度.
主要成果:
- 通过激光增益芯片 (50 μm × 2.5 μm圆形MFD) 实现了95%的模式重叠效率.
- 模拟的TE和TM模式合效率分别为88%和92%在1550 nm.
- 由此产生的合损失为0.56 dB (TE) 和0.40 dB (TM),相当于单模合器.
- 从O频段到L频段经过证明的超宽带操作 (<1dB损失).
- 呈现出高水平失调容忍度 (±8.5微米对≤1dB的多余损失).
- 制造容忍度和蒙特卡洛分析证实了设备的强度.
结论:
- 拟议的FS-MTEC有效地解决了将宽波导,大型MFD激光芯片与光子集成的高合损失.
- 该设备提供了卓越的合性能,超宽带操作和稳定性,使其适合异质芯片集成.
- 这项工作提出了先进光子芯片集成的有前途的新策略,使大型MFD激光器的应用范围更广泛.
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