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基于MMI集成的赛道共振器和嵌入式ReRAM的高带宽非挥发性光学内存
Optics express
|December 19, 2025
概括
本研究介绍了一种新的光子记忆装置,使用多模干扰合器和微赛道共振器进行宽带操作. 该设备展示了非挥发性,多层次的内存功能,具有高数据速率光学存储和计算的潜力.
科学领域:
- 光子学和光学工程 光子学和光学工程
- 材料科学 材料科学 材料科学
- 非易失性存储器件设备
背景情况:
- 光子设备对于高速通信和计算至关重要.
- 将内存功能集成到光子电路中需要高效的光物质相互作用和宽带操作.
- 现有的解决方案往往面临带宽,功耗或可扩展性的限制.
研究的目的:
- 开发一种非挥发性,多层光子记忆装置.
- 为了实现宽带运行和波长分割多重复合 (WDM) 功能.
- 为了增强光物质相互作用并减少用于内存集成的功耗.
主要方法:
- 多模干扰 (MMI) 合器与微赛道共振器 (MRR) 的集成.
- 嵌入一个电阻随机存储器 (ReRAM) 层,使用高指数材料 (BiFeO3,Al2O3) 和一个升高的薄膜堆 (EFS).
- 使用透明的ITO电极,以改善模式限制和导电性.
主要成果:
- 由于MMI诱导的更强的腔合,在1.8-11.7nm范围 (0.22-1.47THz) 中扩大了共振线宽 (FWHM).
- 扩大了9.9-16.9nm的自由光谱范围 (FSR),提高了内存状态的区分能力和操作稳定性.
- 在0V操作下,证明了非挥发性,多层次的内存状态,波长偏移为4.72nm和5.49nm,证实了多状态能力.
结论:
- 开发的CMOS兼容的光子内存架构提供宽带,可扩展的内存功能,具有THz级静态光学带宽.
- 通过MMI-MRR设计,可以提高内存状态的区分,通道间距和操作稳定性.
- 这项技术对光学存储,逻辑电路,神经形态计算和可重新配置的光子系统具有重大潜力.
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