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绿色 (524 nm) InGaN/GaN激光二极管,具有纳米孔隙覆盖和深波导
Optics express
|December 19, 2025
概括
这项研究证明了使用纳米孔隙的GaN覆盖的绿色发射III-化物激光二极管. 深度蚀刻的波导与侧墙被动化显著降低了内部损失,提高了设备的效率.
科学领域:
- 光电学是指光电子产品.
- 材料科学 材料科学 材料科学
- 半导体设备 半导体设备
背景情况:
- III-化物半导体对于光电子设备至关重要.
- 从III-化激光二极管中实现有效的绿色波长发射仍然是一个挑战.
- 纳米孔隙的GaN外和先进的波导设计提供了性能提升的潜力.
研究的目的:
- 为了证明在绿色波长 (524 nm) 工作的III-化物边缘发射激光二极管.
- 为了研究深度蚀刻的波导和原子层沉积 (ALD) 侧壁被动化对设备性能的影响.
- 分析内部损失的减少及其与改善载体封闭和蚀刻选择性的相关性.
主要方法:
- 制造具有纳米孔隙的GaN覆盖的III-化物边缘发射激光二极管.
- 实施深度刻画的脊波导和ALD侧墙被动化.
- 可变条纹长度分析和细分接触吸收测量以确定内部损耗.
- 与浅参考激光器的比较.
主要成果:
- 在脉冲电注下展示绿色波长 (524 nm) III-化物激光二极管.
- 与浅激光相比,深激光显著减少了内部损失,从35厘米-1到21厘米-1.
- 改进的横向载体封闭和多孔蚀刻选择性有助于降低光学损失.
- 实现了近乎连续的波浪操作.
结论:
- 与ALD被动化相结合的深度蚀刻的波导将有效地提高发出绿色的III-化激光二极管的性能.
- 通过优化波导设计和被动化,可以显著减少内部光学损失.
- 进一步的表轴改善是必要的,以克服高门电流密度和低注入效率的实际应用.
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