兴奋剂诱导的磁相转换使 CrSBr 中的全电旋转控制成为可能
Guorui Zhao1,2, Yibin Zhao1,2, Yu Zhang3
1State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
研究人员使用范德瓦尔斯反铁磁半导体开发了一种新的自旋电子装置. 这一突破使电完全控制磁顺序和自旋两极化,为节能电子铺平了道路.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 范德瓦尔斯的反铁磁半导体为低功率自旋电子提供了潜力.
- 挑战包括内在的旋转退化和有限的电旋转控制.
研究的目的:
- 介绍一种使用CrSBr用于电气控制磁性的新型自旋电子平台.
- 通过载体兴奋剂证明一种可逆的反铁磁到铁磁相转换.
主要方法:
- 利用门控制的间歇调控来诱导CrSBr.Br中的载体兴奋剂.
- 设计了CRSBr/石墨烯异构结构,以利用接口电荷转移.
- 研究了使用旋转转移扭矩的磁性顺序的电转换.
主要成果:
- 在CrSBr.Br中实现了可逆的零场磁相过渡.
- 展示了带有门控制的旋转偏振逆转的侧向旋转.
- 展示了超低电流密度 (<10^3 A/cm^2) 的磁性电流切换.
结论:
- 建立了可重新配置的全电自旋电子系统的新范式.
- 突出了范德瓦尔斯反铁磁半导体在先进的自旋电子学中的潜力.
- 确认了拟议机制的效率和设备兼容性.
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