在p型二维场效应晶体管中实现低接触电阻的补充兴奋剂策略
Mayukh Das1, Krishnendu Mukhopadhyay1, Md Sajjad Alam2
1Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States.
Nano letters
|December 21, 2025
概括
研究人员使用补充剂和范德瓦尔斯接口减少了p型二维 (2D) 场效应晶体管 (FET) 的接触电阻. 这一突破提高了逻辑电路的2D FET性能.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 半导体物理 半导体物理
背景情况:
- 高性能互补逻辑电路需要在二维 (2D) 场效应晶体管 (FET) 中的低接触电阻 (R_C).
- 在p型2DFET中实现低R_C是具有挑战性的,因为它们与n型对应物不同,对孔注入具有显著的Schottky障碍.
研究的目的:
- 为了将p型单层WSe2FET中的R_C降低到小于kΩ·μm的范围.
- 为了设计接触和通道区域,以便高效地注入孔.
- 为了缩小n型和p型2D晶体管之间的性能差距.
主要方法:
- 使用退化的Ta-doped多层MoSe2作为p型接触材料,在MOCVD培养的WSe2通道上层叠.
- 采用了制造后的NO回暖,用于选择性道兴奋剂,通过在Se-vacancy位点的NO化学吸收.
- 结合补充兴奋剂与一个干净的2D/2D范德瓦尔斯 (vdW) 接口.
主要成果:
- 对于p型单层WSe2FETs,在kΩ·μm以下的范围内实现了R_C.
- 证明了高效的孔注入,导致高开启电流 (I_ON) 值高达53μA/μm.
- 在对WSe2通道进行兴奋的同时,保留了Ta-doped MoSe2的接触特性.
结论:
- 通过结合接触和通道工程,提出的战略成功地减少了p型2D FET中的R_C.
- 这种方法显著推进了互补的2D逻辑技术的发展.
- 该方法为n型和p型2D晶体管的平衡性能提供了一条途径.
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