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512 Gbps/λ 双极化薄膜基酸调制器,基于一个电光均衡器
Jianmin Zhang1,2, Jian Shen1, Shuxiao Wang1
1State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
Nanophotonics (Berlin, Germany)
|December 22, 2025
概括
本研究介绍了一种用于高速光通信的双极化薄膜尼酸电光调制器. 该设备实现了超过110 GHz的带宽,并支持512 Gbit/s的数据速率,使下一代人工智能驱动系统成为可能.
科学领域:
- 光子学和光学通信技术
- 材料科学 (酸) 材料科学 (酸)
- 电气工程 (调节器设计)
背景情况:
- 人工智能应用推动了对光学系统中更高数据速率的需求.
- 薄膜酸 (TFLN) 电光 (EO) 调制器是下一代光通信的关键.
- -酸在绝缘体 (LNOI) 平台为集成光子设备提供了潜力.
研究的目的:
- 介绍一款新型的双极化 (DP) TFLN EO调制器,集成与一个EO均衡器.
- 在传统的LNOI平台上演示高速和大带宽调制能力.
- 为了实现超出400G/λ的解决方案,用于光通信系统.
主要方法:
- 在LNOI平台上制造DP TFLN EO调制器.
- 集成前方 (11-mm) 和后方 (4.5-mm) 调制部分.
- 描述EO性能,包括Vπ,插入损失和EO带宽.
主要成果:
- 在Y-pol和X-pol两种情况下,实现了4V的半波电压 (Vπ).
- 报告的芯片内插入损失为2.5dB (Y-pol) 和2.8dB (X-pol) 在1.550nm.
- 在TE和TM模式中,已证明3dB的EO带宽超过110GHz,且EO滚动率低.
- 支持数据传输速率为512 Gbit/s (4级脉冲振幅调制 - PAM4),相当于每极化256 Gbit/s.
结论:
- 开发的DP TFLN EO调制器符合高速光通信的严格要求.
- 该设备为超过400G/λ的光学系统提供了有前途的解决方案.
- 这项工作验证了LNOI平台对先进的集成光子设备的潜力.
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