亚声波注射锁 photonic 集成薄膜酸光电子振荡器
Zijun Huang1, Rui Ma1, Qiang Ying1
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China.
Nanophotonics (Berlin, Germany)
|December 22, 2025
概括
我们在薄膜酸上开发了一种新的集成光电子振荡器 (OEO). 该设备实现了超低相位噪声,用于高频无线电频率 (RF) 信号生成,这对于雷达和通信至关重要.
科学领域:
- 光子学 是一个光子学.
- 集成光学 集成光学 集成光学
- 射频工程 射频工程
背景情况:
- 光电子振荡器 (OEO) 对于产生高频,光谱纯净的射频 (RF) 信号至关重要.
- 由于激光不稳定性和环境因素,在集成的OEO中实现超低相位噪声具有挑战性.
- 现有的集成解决方案往往难以满足先进雷达和通信系统的严格相位噪声要求.
研究的目的:
- 在薄膜尼酸盐 (TFLN) 平台上演示了第一个光子集成的,高级次注射锁 OEO.
- 为了实现对外部射频源的更高顺序波的强有力的锁定,以改善信号生成.
- 在集成OEO中建立相位噪声性能的新基准.
主要方法:
- 在TFLN上单立体集成马赫-泽恩德调制器 (MZM) 和添加滴微波振器 (MRR).
- 使用高级次注入锁定与外部射频源在分数频率 (1/2N).
- 利用MRR的双共振来选择特定的调制侧带用于注射锁定.
主要成果:
- 使用第二级和第六级次和注入锁定,证明了28.7 GHz信号的生成.
- 实现侧模式抑制比 (SMSR) 超过78dB,具有最小的虚假排放.
- 测量阶段噪声低于-80dBc/Hz在100Hz和低于-115dBc/Hz在10kHz抵消从载体.
结论:
- 开发的基于TFLN的集成OEO成功地实现了高级次注入锁定.
- 这种方法显著提高了光谱纯度,并减少了产生的射频信号中的相位噪声.
- 该系统为集成的OEO设定了新的性能标准,为下一代雷达和通信技术铺平了道路.
相关概念视频
Capacitor With A Dielectric
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Oscillations In An LC Circuit
An idealized LC circuit of zero resistance can oscillate without any source of emf by shifting the energy stored in the circuit between the electric and magnetic fields. In such an LC circuit, if the capacitor contains a charge q before the switch is closed, then all the energy of the circuit is initially stored in the electric field of the capacitor. This energy is given by
MOSFET
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET Amplifiers
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...


