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基于多功能BCB平台的选择性去除板块的超宽带TFLN调制器,可实现高合效率和抑制EO放松

Yutong He¹, Hao Liu¹, Changzheng Sun¹

¹Beijing National Research Center for Information Science and Technology (BNRist), State Key Laboratory of Space Network and Communications, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.

Nanophotonics (Berlin, Germany)

|December 22, 2025

概括

这项研究引入了一种新的薄膜尼酸电光调制器,采用氧基布丁材料. 它实现了低驱动电压,宽带宽和高效率,可实现390 Gbit/s的数据传输.

科学领域:

光子学是一个光子学.
材料科学材料科学材料科学
电气工程电气工程

背景情况:

薄膜酸 (TFLN) 对于高性能电光 (EO) 调制器至关重要.
实现低驱动电压,广泛的EO带宽,低插入损失和高调制效率同时仍然是TFLN调制器面临的挑战.

研究的目的:

在TFLN平台上演示一个先进的电信波长EO调制器.
为了克服传统的电压带宽权衡,并减少合损失.
为了确保稳定的低频EO响应和无偏差漂移的操作.

主要方法:

纳入具有低介电常数 (低-k) 的多功能环丁 (BCB) 材料.
使用狭窄的电极间隙来实现完美的速度匹配和降低射频损失.
在高效边缘合器中采用双层反向渐变的波导.
选择性去除底层TFLN板块以消除介电松.

主要成果:

证明了1.5V (C波段) 和1.19V (O波段) 的低半波电压 (Vπ),产生1.95V·cm和1.55V·cm的Vπ·L产物.
通过使用BCB覆盖边缘合器,实现了每面0.54dB的超低合损失.
在C + O频段中展示了超宽的EO带宽超过110GHz.
在C和O频段中成功演示了高速度PAM8数据传输速度高达390 Gbit/s.

结论:

使用BCB材料开发的TFLN EO调制器提供了卓越的性能,包括低压,宽带宽和低损耗.
新型架构简化了制造,并增强了高速光通信的应用潜力.
这一进步推动了基于TFLN的EO调制器在要求高要求的电信应用中的边界.

关键词:

采用BCB覆盖的边缘合器在DC偏差漂移中,DC偏差漂移.EO 没有放松,没有放松.在IM/DDDD时,低k 底层填充低k 底层填充薄膜尼酸调制器薄膜尼酸调制器

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