在光子晶片中用于指导共振的通用非赫米蒂安哈密尔顿
Viet Anh Nguyen1, Hung Son Nguyen1, Zhiyi Yuan2,3,4
1Center for Environmental Intelligence, College of Engineering and Computer Science, VinUniversity, Gia Lam Commute, Hanoi, 14000, Vietnam.
Nanophotonics (Berlin, Germany)
|December 22, 2025
概括
我们为光子晶片引入了一种新的非赫米特汉密尔顿方法,准确地建模共振和损失. 这种方法预测了复杂的带结构和拓特征,如连续 (BICs) 和异常点 (EPs) 中的边界状态.
科学领域:
- 光子学和光学工程的工程.
- 凝聚物质物理学 凝聚物质物理学
- 电磁主义 电磁主义
背景情况:
- 光子晶片表现出复杂的电磁共振,对光学设备至关重要.
- 建模这些共振,特别是损失和拓特征,需要先进的理论框架.
- 现有的方法通常依赖于现象学假设,或缺乏对辐射效应的全面治疗.
研究的目的:
- 为光子晶片中的指导共振开发一个通用的非赫米特汉密尔顿形式主义.
- 系统地从马克斯韦方程中推导出这种形式主义,包括引导模式合和辐射损失.
- 为了使复杂的光子共振及其拓性质的预测和高效建模.
主要方法:
- 电磁场在没有图案的板块的模式基础上的系统引导模式扩张.
- 整合辐射法布里-佩罗特通道来导出哈密尔顿的分析运算子结构.
- 使用模态重叠积分和允许度调制的里埃元件计算哈密尔顿系数.
主要成果:
- 衍生的哈密尔顿式明确包括散射和辐射合术语.
- 对六角格子的复杂带结构,近场和远场模式的准确预测.
- 在连续 (BICs) 中对称性保护的绑定状态的复制,偶然的BICs,奇拉异常点 (EPs),以及在K点附近的可调自态行为.
结论:
- 开发的形式主义为建模光子晶片共振提供了一个预测和有效的工具.
- 它成功地捕获了拓和对称性保护特征,包括BIC和EP.
- 该形式主义可扩展到各种对称类 (C6,C2,C4),在光子研究中具有广泛的适用性.
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