使用 CNTFET 的低功率和高速方位节点颠覆耐受锁设计
Shaik Asiya1, Satheesh Kumar S2
1School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, 632014, Tamil Nadu, India.
Scientific reports
|December 22, 2025
概括
本研究介绍了一种新的低功耗高速度方位节点颠覆碳纳米管锁 (LHQCNT),用于应对规模化半导体设备中的单一事件颠覆. LHQCNT锁具表现出优越的低功耗和高速性能,提高了电路可靠性.
科学领域:
- 半导体设备物理学 半导体设备物理
- 纳米技术纳米技术
- 集成电路设计 集成电路设计
背景情况:
- 半导体缩放面临的挑战包括可靠性降低和易受重带电粒子引起的单一事件颠覆 (SEUs) 的影响.
- 设计式辐射硬化 (RHBD) 技术对于在现代集成电路 (IC) 中减轻SEU至关重要.
- 碳纳米管 (CNTs) 为CMOS技术提供了一个有前途的替代方案,有可能提高性能和可靠性.
研究的目的:
- 提出和研究一个新的低功率高速度方位节点颠覆碳纳米管锁 (LHQCNT).
- 通过具有冗余节点的独特设计,增强对多节点颠覆的稳定性.
- 为了比较LHQCNT锁与现有的硬化锁的性能.
主要方法:
- 使用碳纳米管技术设计和模拟LHQCNT锁.
- 在三个双互锁单元内实现三角洲互连,以实现冗余性.
- 性能比较分析包括功率,延迟,功率延迟产物 (PDP) 和平均功率延迟产物 (APDP).
主要成果:
- 在1V供应电压下,LHQCNT锁实现了显著的低功耗 (4.4μW) 和延迟 (1.23 ps).
- 证明了出色的软误差耐受性,与现有的硬化锁相比.
- 取得了较低的PDP (5.41e-18 J) 和APDP (5.19e-2).
结论:
- 拟议的LHQCNT锁有效地解决了在缩放IC中的SEUs和多节点Upsets.
- CNT技术为开发高性能,可靠的半导体电路提供了可行的途径.
- LHQCNT锁在低功耗,高速和辐射硬化锁设计方面取得了重大进步.
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